NGTB60N60SWG
onsemi
onsemi
IGBT 600V 120A 298W TO247
$3.20
Available to order
Reference Price (USD)
1+
$3.20000
500+
$3.168
1000+
$3.136
1500+
$3.104
2000+
$3.072
2500+
$3.04
Exquisite packaging
Discount
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The NGTB60N60SWG Single IGBT transistor by onsemi is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The NGTB60N60SWG ensures precise power control and long-term stability. With onsemi's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate NGTB60N60SWG into your projects for superior results.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 120 A
- Current - Collector Pulsed (Icm): 240 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
- Power - Max: 298 W
- Switching Energy: 1.41mJ (on), 600µJ (off)
- Input Type: Standard
- Gate Charge: 173 nC
- Td (on/off) @ 25°C: 87ns/180ns
- Test Condition: 400V, 60A, 10Ohm, 15V
- Reverse Recovery Time (trr): 76 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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