APT35GP120B2DQ2G
Microchip Technology
Microchip Technology
IGBT 1200V 96A 543W TMAX
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Reference Price (USD)
30+
$18.24833
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Upgrade your power management systems with the APT35GP120B2DQ2G Single IGBT transistor from Microchip Technology. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the APT35GP120B2DQ2G provides reliable and efficient operation. Microchip Technology's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose APT35GP120B2DQ2G for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 96 A
- Current - Collector Pulsed (Icm): 140 A
- Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A
- Power - Max: 543 W
- Switching Energy: 750µJ (on), 680µJ (off)
- Input Type: Standard
- Gate Charge: 150 nC
- Td (on/off) @ 25°C: 16ns/95ns
- Test Condition: 600V, 35A, 4.3Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Variant
- Supplier Device Package: -
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