NGTB50N65S1WG
onsemi
onsemi
IGBT TRENCH 650V 140A TO247
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Optimize your power systems with the NGTB50N65S1WG Single IGBT transistor from onsemi. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the NGTB50N65S1WG delivers consistent and reliable operation. Trust onsemi's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 140 A
- Current - Collector Pulsed (Icm): 140 A
- Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
- Power - Max: 300 W
- Switching Energy: 1.25mJ (on), 530µJ (off)
- Input Type: Standard
- Gate Charge: 128 nC
- Td (on/off) @ 25°C: 75ns/128ns
- Test Condition: 400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): 70 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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