APT11GF120BRDQ1G
Microsemi Corporation
Microsemi Corporation
IGBT 1200V 25A 156W TO247
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Discover the APT11GF120BRDQ1G Single IGBT transistor by Microsemi Corporation, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the APT11GF120BRDQ1G ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the APT11GF120BRDQ1G for unmatched power control.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 25 A
- Current - Collector Pulsed (Icm): 24 A
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 8A
- Power - Max: 156 W
- Switching Energy: 300µJ (on), 285µJ (off)
- Input Type: Standard
- Gate Charge: 65 nC
- Td (on/off) @ 25°C: 7ns/100ns
- Test Condition: 800V, 8A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 [B]
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