APT40GP60SG
Microsemi Corporation
Microsemi Corporation
IGBT 600V 100A 543W D3PAK
$0.00
Available to order
Reference Price (USD)
43+
$11.72953
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power systems with the APT40GP60SG Single IGBT transistor from Microsemi Corporation. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the APT40GP60SG delivers consistent and reliable operation. Trust Microsemi Corporation's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
- Power - Max: 543 W
- Switching Energy: 385µJ (on), 352µJ (off)
- Input Type: Standard
- Gate Charge: 135 nC
- Td (on/off) @ 25°C: 20ns/64ns
- Test Condition: 400V, 40A, 5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: D3 [S]
Related Products
Infineon Technologies
IRGPC40S
Microsemi Corporation
APT75GN60B2DQ3G
IXYS
IXGB200N60B3
Microchip Technology
APT102GA60B2
IXYS
IXGR40N60B
Infineon Technologies
SIGC03T60EX1SA1
Microchip Technology
APT35GP120B2D2G
IXYS
IXGH50N60C2
Infineon Technologies
IRGB4607DPBF
Infineon Technologies