RJP60F5DPK-01#T0
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT 600V 80A 260.4W
$3.89
Available to order
Reference Price (USD)
1+
$4.07000
10+
$3.63200
25+
$3.26920
100+
$2.97860
Exquisite packaging
Discount
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Discover the RJP60F5DPK-01#T0 Single IGBT transistor by Renesas Electronics America Inc, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the RJP60F5DPK-01#T0 ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the RJP60F5DPK-01#T0 for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
- Power - Max: 260.4 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 74 nC
- Td (on/off) @ 25°C: 53ns/90ns
- Test Condition: 400V, 30A, 5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-3P
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