STGWA25M120DF3
STMicroelectronics
STMicroelectronics
IGBT 1200V 50A 375W TO247
$10.76
Available to order
Reference Price (USD)
1+
$10.76000
30+
$9.37000
120+
$8.23600
510+
$7.27000
1,020+
$6.43000
Exquisite packaging
Discount
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Optimize your power systems with the STGWA25M120DF3 Single IGBT transistor from STMicroelectronics. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the STGWA25M120DF3 delivers consistent and reliable operation. Trust STMicroelectronics's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 100 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
- Power - Max: 375 W
- Switching Energy: 850µJ (on), 1.3mJ (off)
- Input Type: Standard
- Gate Charge: 85 nC
- Td (on/off) @ 25°C: 28ns/150ns
- Test Condition: 600V, 25A, 15Ohm, 15V
- Reverse Recovery Time (trr): 265 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 Long Leads
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