APT60GT60JRDQ3
Microchip Technology
Microchip Technology
IGBT 600V 105A 379W SOT227
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineered for excellence, the APT60GT60JRDQ3 IGBT module by Microchip Technology sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The APT60GT60JRDQ3 finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Microchip Technology continues to lead the IGBT module revolution with innovations like the APT60GT60JRDQ3.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 105 A
- Power - Max: 379 W
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
- Current - Collector Cutoff (Max): 330 µA
- Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: ISOTOP®
Related Products
Infineon Technologies
6MS24017E33W32860NOSA1
Infineon Technologies
DDB6U180N16RRB37BOSA1
Microsemi Corporation
APTGF300A120D3G
Littelfuse Inc.
MG12300D-BN3MM
IXYS
VKI75-06P1
Microchip Technology
APT100GT60JR
Vishay General Semiconductor - Diodes Division
VS-CPV362M4KPBF
Littelfuse Inc.
MG1250S-BA1MM
Infineon Technologies
FF200R12MT4
Infineon Technologies