DDB6U180N16RRB37BOSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE
$0.00
Available to order
Reference Price (USD)
10+
$106.56300
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DDB6U180N16RRB37BOSA1 by Infineon Technologies redefines performance in the IGBT modules segment of Discrete Semiconductor Products. Featuring sixth-generation field-stop technology, this power transistor delivers optimal switching characteristics and short-circuit withstand capability. Key attributes include: 175 C maximum junction temperature, low EMI generation, and integrated current sensing. Industrial applications span from elevator drives and CNC machinery to large-scale HVAC systems. A practical implementation would be using the DDB6U180N16RRB37BOSA1 in high-efficiency servo controllers for manufacturing automation. Infineon Technologies combines innovation with quality in every DDB6U180N16RRB37BOSA1 module.
Specifications
- Product Status: Discontinued at Digi-Key
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: -
- NTC Thermistor: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Microsemi Corporation
APTGF300A120D3G
Littelfuse Inc.
MG12300D-BN3MM
IXYS
VKI75-06P1
Microchip Technology
APT100GT60JR
Vishay General Semiconductor - Diodes Division
VS-CPV362M4KPBF
Littelfuse Inc.
MG1250S-BA1MM
Infineon Technologies
FF200R12MT4
Infineon Technologies
2PS06017E32G28213NOSA1
SemiQ
GSID100A120S5C1
onsemi