MG12300D-BN3MM
Littelfuse Inc.
Littelfuse Inc.
IGBT MODULE 1200V 450A 1450W D3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience next-generation power control with Littelfuse Inc.'s MG12300D-BN3MM IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The MG12300D-BN3MM offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the MG12300D-BN3MM in your next-generation HVDC systems or particle accelerator power supplies. Littelfuse Inc. delivers reliability where it matters most with the MG12300D-BN3MM IGBT module.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 450 A
- Power - Max: 1450 W
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 300A
- Current - Collector Cutoff (Max): 2 mA
- Input Capacitance (Cies) @ Vce: 22 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: D-3 Module
- Supplier Device Package: D3
Related Products
IXYS
VKI75-06P1
Microchip Technology
APT100GT60JR
Vishay General Semiconductor - Diodes Division
VS-CPV362M4KPBF
Littelfuse Inc.
MG1250S-BA1MM
Infineon Technologies
FF200R12MT4
Infineon Technologies
2PS06017E32G28213NOSA1
SemiQ
GSID100A120S5C1
onsemi
FMG2G50US120
Microsemi Corporation
APTGF30TL601G
Infineon Technologies