APTGF90DH60T3G
Microsemi Corporation
Microsemi Corporation
IGBT MODULE 600V 110A 416W SP3
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Discover the power of Microsemi Corporation's APTGF90DH60T3G, a premium IGBT module in the Transistors - IGBTs - Modules classification. This discrete semiconductor solution offers ultra-low conduction losses and avalanche ruggedness for harsh environments. The module's unique selling points include: VCE(sat) negative temperature coefficient, aluminum nitride substrate, and press-pack technology. Major application sectors include rail transportation, marine propulsion, and aerospace power systems. The APTGF90DH60T3G performs exceptionally well in high-voltage DC transmission and pulsed power applications. With Microsemi Corporation's APTGF90DH60T3G, you get unmatched reliability in power electronics designs.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Asymmetrical Bridge
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 110 A
- Power - Max: 416 W
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
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