VS-50MT060WHTAPBF
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MODULE 600V 114A 658W MTP
$0.00
Available to order
Reference Price (USD)
1+
$57.75000
15+
$54.25000
30+
$52.50000
105+
$48.65000
Exquisite packaging
Discount
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Vishay General Semiconductor - Diodes Division's VS-50MT060WHTAPBF sets the benchmark for IGBT modules in the Transistors - IGBTs - Modules sector. This discrete semiconductor product features revolutionary reverse-conducting technology and dual-side cooling capability. The module's competitive advantages include: 50% higher power cycling capability, RoHS-compliant materials, and vibration-resistant construction. It's ideally suited for hybrid electric vehicles, smart grid applications, and high-power RF amplifiers. Implement the VS-50MT060WHTAPBF in your traction inverters or high-energy physics experiments for unparalleled performance. Trust Vishay General Semiconductor - Diodes Division to deliver cutting-edge IGBT solutions with the VS-50MT060WHTAPBF power module.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 114 A
- Power - Max: 658 W
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A
- Current - Collector Cutoff (Max): 400 µA
- Input Capacitance (Cies) @ Vce: 7.1 nF @ 30 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 12-MTP Module
- Supplier Device Package: MTP
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