APTGT100SK120D1G
Microsemi Corporation
Microsemi Corporation
IGBT MODULE 1200V 150A 520W D1
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineered for excellence, the APTGT100SK120D1G IGBT module by Microsemi Corporation sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The APTGT100SK120D1G finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Microsemi Corporation continues to lead the IGBT module revolution with innovations like the APTGT100SK120D1G.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 150 A
- Power - Max: 520 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
- Current - Collector Cutoff (Max): 3 mA
- Input Capacitance (Cies) @ Vce: 7 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: D1
- Supplier Device Package: D1
Related Products
Powerex Inc.
CM15TF-12H
Infineon Technologies
DF80R12W2H3_B11
Vishay General Semiconductor - Diodes Division
VS-GB300AH120N
Microchip Technology
CMSDC60H19B3G
Powerex Inc.
CM75DU-24H
Vishay General Semiconductor - Diodes Division
VS-GB150TH120N
Vishay General Semiconductor - Diodes Division
VS-70MT060WHTAPBF
Vishay General Semiconductor - Diodes Division
VS-GB50TP120N
Powerex Inc.
CM200DY-24H
Infineon Technologies