APTGT150A120D1G
Microsemi Corporation
Microsemi Corporation
IGBT MODULE 1200V 220A 700W D1
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Optimize your power systems with Microsemi Corporation's APTGT150A120D1G, a high-efficiency IGBT module in the Discrete Semiconductor Products range. This transistor module incorporates seventh-generation micro-pattern trench technology for minimal conduction losses. Special features include: integrated gate driver compatibility, SCADA-ready monitoring interfaces, and corrosion-resistant terminals. Application areas cover industrial cranes, subway power networks, and large-scale battery storage systems. The APTGT150A120D1G is particularly effective in high-ambient-temperature environments like steel mill drives. Microsemi Corporation brings decades of semiconductor expertise to every APTGT150A120D1G module.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 220 A
- Power - Max: 700 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
- Current - Collector Cutoff (Max): 4 mA
- Input Capacitance (Cies) @ Vce: 10.8 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: D1
- Supplier Device Package: D1
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