APTGT25A120D1G
Microsemi Corporation
Microsemi Corporation
IGBT MODULE 1200V 40A 140W D1
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The APTGT25A120D1G by Microsemi Corporation redefines performance in the IGBT modules segment of Discrete Semiconductor Products. Featuring sixth-generation field-stop technology, this power transistor delivers optimal switching characteristics and short-circuit withstand capability. Key attributes include: 175 C maximum junction temperature, low EMI generation, and integrated current sensing. Industrial applications span from elevator drives and CNC machinery to large-scale HVAC systems. A practical implementation would be using the APTGT25A120D1G in high-efficiency servo controllers for manufacturing automation. Microsemi Corporation combines innovation with quality in every APTGT25A120D1G module.
Specifications
- Product Status: Discontinued at Digi-Key
- IGBT Type: Trench Field Stop
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 40 A
- Power - Max: 140 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 1.8 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: D1
- Supplier Device Package: D1
Related Products
Vishay General Semiconductor - Diodes Division
VS-GB200LH120N
Microsemi Corporation
APTGL60DSK120T3G
Powerex Inc.
CM100BU-12H
Vishay General Semiconductor - Diodes Division
VS-GB150YG120NT
IXYS
MWI75-12A8
IXYS
MUBW40-12T7
Powerex Inc.
CM20TF-12H
Infineon Technologies
IRG5K100HH06E
Microsemi Corporation
APTGT30SK170T1G
IXYS