APTGT35A120D1G
Microsemi Corporation
Microsemi Corporation
IGBT MODULE 1200V 55A 205W D1
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The APTGT35A120D1G from Microsemi Corporation is a high-performance IGBT module designed for power electronics applications. As part of the Discrete Semiconductor Products category, this transistor module offers exceptional efficiency and reliability. Key features include low saturation voltage, high-speed switching, and robust thermal performance. These IGBT modules are widely used in industrial motor drives, renewable energy systems, and electric vehicle powertrains. For example, the APTGT35A120D1G is ideal for solar inverters, welding equipment, and UPS systems where high power handling is required. Choose Microsemi Corporation's advanced IGBT technology for your most demanding power conversion challenges.
Specifications
- Product Status: Discontinued at Digi-Key
- IGBT Type: Trench Field Stop
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 55 A
- Power - Max: 205 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: D1
- Supplier Device Package: D1
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