APTGV50H120BTPG
Microsemi Corporation
Microsemi Corporation
IGBT MODULE 1200V 75A 270W SP6P
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Optimize your power systems with Microsemi Corporation's APTGV50H120BTPG, a high-efficiency IGBT module in the Discrete Semiconductor Products range. This transistor module incorporates seventh-generation micro-pattern trench technology for minimal conduction losses. Special features include: integrated gate driver compatibility, SCADA-ready monitoring interfaces, and corrosion-resistant terminals. Application areas cover industrial cranes, subway power networks, and large-scale battery storage systems. The APTGV50H120BTPG is particularly effective in high-ambient-temperature environments like steel mill drives. Microsemi Corporation brings decades of semiconductor expertise to every APTGV50H120BTPG module.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT, Trench Field Stop
- Configuration: Boost Chopper, Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 75 A
- Power - Max: 270 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6-P
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