BSM100GB120DLCKHOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 100A 830W
$0.00
Available to order
Reference Price (USD)
10+
$90.98700
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the power of Infineon Technologies's BSM100GB120DLCKHOSA1, a premium IGBT module in the Transistors - IGBTs - Modules classification. This discrete semiconductor solution offers ultra-low conduction losses and avalanche ruggedness for harsh environments. The module's unique selling points include: VCE(sat) negative temperature coefficient, aluminum nitride substrate, and press-pack technology. Major application sectors include rail transportation, marine propulsion, and aerospace power systems. The BSM100GB120DLCKHOSA1 performs exceptionally well in high-voltage DC transmission and pulsed power applications. With Infineon Technologies's BSM100GB120DLCKHOSA1, you get unmatched reliability in power electronics designs.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 100 A
- Power - Max: 830 W
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Microsemi Corporation
APTGT75DH120TG
Powerex Inc.
CM75TL-24NF
Microchip Technology
APTGF150DH120G
IXYS
IXGN50N60BD3
Infineon Technologies
F475R12KS4B11BOSA1
IXYS
VWI20-06P1
Powerex Inc.
CM300DU-12H
Powerex Inc.
CM300E3U-12H
Microsemi Corporation
APTGT25DA120D1G
Infineon Technologies