Shopping cart

Subtotal: $0.00

APTM120DA30T1G

Microchip Technology
APTM120DA30T1G Preview
Microchip Technology
MOSFET N-CH 1200V 31A SP1
$70.11
Available to order
Reference Price (USD)
100+
$39.90240
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 360mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 14560 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 657W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP1
  • Package / Case: SP1

Related Products

Toshiba Semiconductor and Storage

TK8R2E06PL,S1X

Diodes Incorporated

DMT10H072LFDFQ-13

Toshiba Semiconductor and Storage

TK110Z65Z,S1F

Diodes Incorporated

DMTH43M8LFGQ-7

Diodes Incorporated

DMTH4008LPS-13

Renesas Electronics America Inc

RJK03E0DNS-00#J5

Renesas Electronics America Inc

2SK3367-Z-E2-AZ

Top