BCR35PNH6327XTSA1
Infineon Technologies
Infineon Technologies
TRANS PREBIAS NPN/PNP 50V SOT363
$0.44
Available to order
Reference Price (USD)
3,000+
$0.07259
6,000+
$0.06594
15,000+
$0.05928
30,000+
$0.05595
75,000+
$0.05040
Exquisite packaging
Discount
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The BCR35PNH6327XTSA1 by Infineon Technologies is a cutting-edge pre-biased BJT array designed for high-performance applications. Its unique architecture provides superior current handling and thermal dissipation, making it ideal for power electronics and RF modules. Commonly employed in aerospace, defense, and consumer electronics, this transistor array offers exceptional reliability. Infineon Technologies's state-of-the-art production facilities ensure that the BCR35PNH6327XTSA1 delivers consistent results under extreme conditions. Engineers trust this product for its precision, durability, and ease of integration into complex systems.
Specifications
- Product Status: Not For New Designs
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 150MHz
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-PO
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