BFG 196 E6327
Infineon Technologies
Infineon Technologies
RF TRANS NPN 12V 7.5GHZ SOT223-4
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the BFG 196 E6327, a premium RF Bipolar Junction Transistor (BJT) by Infineon Technologies, part of the Discrete Semiconductor Products lineup. This transistor is engineered for high-frequency applications, delivering outstanding performance in RF amplification and switching. Its advanced design ensures minimal signal loss and high efficiency, making it perfect for use in mobile communication, broadcast equipment, and satellite systems. The BFG 196 E6327 boasts features like high power gain, low intermodulation distortion, and superior thermal management. Whether you're designing RF amplifiers, oscillators, or mixers, this transistor provides the reliability and performance you need. Choose Infineon Technologies for cutting-edge RF BJT solutions.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 7.5GHz
- Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
- Gain: 9dB ~ 14.5dB
- Power - Max: 800mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
- Current - Collector (Ic) (Max): 150mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4
Related Products
Infineon Technologies
BFP193WE6327HTSA1
Microsemi Corporation
2N2857UB
STMicroelectronics
SD1726
NXP USA Inc.
BFR93A,235
onsemi
2N5770_D26Z
CEL
2SC5754-A
Fairchild Semiconductor
2N3663
CEL
2SC5455-A
Infineon Technologies