BFR181E6327
Infineon Technologies
Infineon Technologies
LOW-NOISE TRANSISTOR
$0.08
Available to order
Reference Price (USD)
1+
$0.08000
500+
$0.0792
1000+
$0.0784
1500+
$0.0776
2000+
$0.0768
2500+
$0.076
Exquisite packaging
Discount
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Introducing the BFR181E6327, a high-performance RF Bipolar Junction Transistor (BJT) from Infineon Technologies, designed for the Discrete Semiconductor Products market. This transistor excels in RF amplification, offering high linearity and low phase noise. Its versatile design makes it suitable for a wide range of applications, including cellular base stations, satellite communication, and RF test equipment. The BFR181E6327 features high power gain, excellent thermal performance, and long-term durability. Whether you're working on consumer electronics or industrial systems, this transistor delivers unmatched performance. Rely on Infineon Technologies for top-tier RF BJT solutions.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
- Gain: 18.5dB
- Power - Max: 175mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
- Current - Collector (Ic) (Max): 20mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
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