BLF6G20LS-180RN112
NXP USA Inc.
NXP USA Inc.
RF POWER TRANSISTORS
$78.18
Available to order
Reference Price (USD)
1+
$78.18000
500+
$77.3982
1000+
$76.6164
1500+
$75.8346
2000+
$75.0528
2500+
$74.271
Exquisite packaging
Discount
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Introducing the BLF6G20LS-180RN112, a high-performance RF Bipolar Junction Transistor (BJT) from NXP USA Inc., designed for the Discrete Semiconductor Products market. This transistor excels in RF amplification, offering high linearity and low phase noise. Its versatile design makes it suitable for a wide range of applications, including cellular base stations, satellite communication, and RF test equipment. The BLF6G20LS-180RN112 features high power gain, excellent thermal performance, and long-term durability. Whether you're working on consumer electronics or industrial systems, this transistor delivers unmatched performance. Rely on NXP USA Inc. for top-tier RF BJT solutions.
Specifications
- Product Status: Active
- Transistor Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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