BSD235NH6327XTSA1
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 20V 0.95A SOT363
$0.48
Available to order
Reference Price (USD)
3,000+
$0.12030
6,000+
$0.11370
15,000+
$0.10710
30,000+
$0.09918
75,000+
$0.09588
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the high-performance BSD235NH6327XTSA1 from Infineon Technologies, a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the BSD235NH6327XTSA1 delivers unmatched performance. Trust Infineon Technologies's cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 950mA
- Rds On (Max) @ Id, Vgs: 350mOhm @ 950mA, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 1.6µA
- Gate Charge (Qg) (Max) @ Vgs: 0.32nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 63pF @ 10V
- Power - Max: 500mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-PO
Related Products
Diodes Incorporated
DMC3071LVT-13
Fairchild Semiconductor
RF1K4915496
onsemi
NTHC5513T1G
Rohm Semiconductor
QH8K26TR
Microchip Technology
APTC60TAM24TPG
Fairchild Semiconductor
NDS8947
Rectron USA
RM2004NE
Central Semiconductor Corp
CMLDM7003G TR
Vishay Siliconix
SQUN700E-T1_GE3
Panasonic Electronic Components