BSD314SPEL6327HTSA1
Infineon Technologies
Infineon Technologies
MOSFET P-CH 30V 1.5A SOT363-6
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BSD314SPEL6327HTSA1 by Infineon Technologies is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Infineon Technologies for innovation you can depend on.
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 2V @ 6.3µA
- Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT363-PO
- Package / Case: 6-VSSOP, SC-88, SOT-363
Related Products
Panasonic Electronic Components
MTM232270LBF
Rohm Semiconductor
2SK2740
NXP USA Inc.
PMN23UN,165
STMicroelectronics
STP9NK70Z
onsemi
NVMFS6B03NT3G
onsemi
FQB17P06TM
onsemi
MCH6444-TL-W
Rohm Semiconductor
RSS070N05FU6TB
Infineon Technologies
IRFS7530PBF
Toshiba Semiconductor and Storage