BSM100GB60DLCHOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 600V 130A 445W
$0.00
Available to order
Reference Price (USD)
1+
$72.67000
10+
$69.03800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BSM100GB60DLCHOSA1 from Infineon Technologies exemplifies excellence in Transistors - IGBTs - Modules technology. This discrete semiconductor solution features a unique direct liquid cooling design for maximum power density. Technical highlights include: 200% overload capability, ultra-thin wafer technology, and short-circuit protection. The module excels in demanding applications such as electric aircraft propulsion, mining equipment, and high-speed rail systems. A typical deployment would be using the BSM100GB60DLCHOSA1 in megawatt-level wind turbine converters. With Infineon Technologies's proven track record, the BSM100GB60DLCHOSA1 represents the future of power semiconductor modules.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 130 A
- Power - Max: 445 W
- Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A
- Current - Collector Cutoff (Max): 500 µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Powerex Inc.
CM300DX-24S1
IXYS
IXSN80N60AU1
Microsemi Corporation
APTGF350DA60G
Powerex Inc.
CM200EXS-24S
Microchip Technology
APTGF500U60D4G
Microchip Technology
APTGF150A120TG
STMicroelectronics
STGE50NC60VD
Infineon Technologies
FF600R07ME4B11BOSA1
STMicroelectronics
STGE50NC60WD
Microchip Technology