IXSN80N60AU1
IXYS
IXYS
IGBT MOD 600V 160A 500W SOT227B
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IXYS's IXSN80N60AU1 sets the benchmark for IGBT modules in the Transistors - IGBTs - Modules sector. This discrete semiconductor product features revolutionary reverse-conducting technology and dual-side cooling capability. The module's competitive advantages include: 50% higher power cycling capability, RoHS-compliant materials, and vibration-resistant construction. It's ideally suited for hybrid electric vehicles, smart grid applications, and high-power RF amplifiers. Implement the IXSN80N60AU1 in your traction inverters or high-energy physics experiments for unparalleled performance. Trust IXYS to deliver cutting-edge IGBT solutions with the IXSN80N60AU1 power module.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 160 A
- Power - Max: 500 W
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 80A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 8.5 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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