BSM150GB170DN2E3256HDLA1
Infineon Technologies
Infineon Technologies
BSM150GB170DN2 - INSULATED GATE
$103.40
Available to order
Reference Price (USD)
1+
$103.40000
500+
$102.366
1000+
$101.332
1500+
$100.298
2000+
$99.264
2500+
$98.23
Exquisite packaging
Discount
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Optimize your power systems with Infineon Technologies's BSM150GB170DN2E3256HDLA1, a high-efficiency IGBT module in the Discrete Semiconductor Products range. This transistor module incorporates seventh-generation micro-pattern trench technology for minimal conduction losses. Special features include: integrated gate driver compatibility, SCADA-ready monitoring interfaces, and corrosion-resistant terminals. Application areas cover industrial cranes, subway power networks, and large-scale battery storage systems. The BSM150GB170DN2E3256HDLA1 is particularly effective in high-ambient-temperature environments like steel mill drives. Infineon Technologies brings decades of semiconductor expertise to every BSM150GB170DN2E3256HDLA1 module.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 300 A
- Power - Max: 1250 W
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 150A
- Current - Collector Cutoff (Max): 300 µA
- Input Capacitance (Cies) @ Vce: 10 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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