NXH100B120H3Q0PG
onsemi
onsemi
PIM 60-80KW Q0BOOST-L57 1200V, 1
$62.97
Available to order
Reference Price (USD)
1+
$62.97000
500+
$62.3403
1000+
$61.7106
1500+
$61.0809
2000+
$60.4512
2500+
$59.8215
Exquisite packaging
Discount
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onsemi's NXH100B120H3Q0PG stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the NXH100B120H3Q0PG enables higher power density in MRI gradient amplifiers. Choose onsemi for IGBT modules that push performance boundaries.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 61 A
- Power - Max: 186 W
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
- Current - Collector Cutoff (Max): 200 µA
- Input Capacitance (Cies) @ Vce: 9.075 nF @ 20 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: 22-PIM (55x32.5)
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