BSM50GD120DN2BPSA1
Infineon Technologies
Infineon Technologies
LOW POWER ECONO AG-ECONO2A-211
$219.22
Available to order
Reference Price (USD)
1+
$219.22000
500+
$217.0278
1000+
$214.8356
1500+
$212.6434
2000+
$210.4512
2500+
$208.259
Exquisite packaging
Discount
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Engineered for excellence, the BSM50GD120DN2BPSA1 IGBT module by Infineon Technologies sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The BSM50GD120DN2BPSA1 finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Infineon Technologies continues to lead the IGBT module revolution with innovations like the BSM50GD120DN2BPSA1.
Specifications
- Product Status: Not For New Designs
- IGBT Type: -
- Configuration: Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 72 A
- Power - Max: 350 W
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-ECONO2A
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