BSM200GA170DLCHOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1700V 400A 1920W
$156.00
Available to order
Reference Price (USD)
10+
$152.90200
Exquisite packaging
Discount
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Engineered for excellence, the BSM200GA170DLCHOSA1 IGBT module by Infineon Technologies sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The BSM200GA170DLCHOSA1 finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Infineon Technologies continues to lead the IGBT module revolution with innovations like the BSM200GA170DLCHOSA1.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 400 A
- Power - Max: 1920 W
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 200A
- Current - Collector Cutoff (Max): 400 µA
- Input Capacitance (Cies) @ Vce: 15 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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