BSM200GB60DLCHOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 600V 230A 730W
$0.00
Available to order
Reference Price (USD)
1+
$93.22000
10+
$88.41200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineered for excellence, the BSM200GB60DLCHOSA1 IGBT module by Infineon Technologies sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The BSM200GB60DLCHOSA1 finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Infineon Technologies continues to lead the IGBT module revolution with innovations like the BSM200GB60DLCHOSA1.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 230 A
- Power - Max: 730 W
- Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 200A
- Current - Collector Cutoff (Max): 500 µA
- Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Powerex Inc.
CM200DY-12NF
Infineon Technologies
FS200R07A1E3BOMA1
Vishay General Semiconductor - Diodes Division
VS-ETF150Y65U
onsemi
FMG2G150US60E
Vishay General Semiconductor - Diodes Division
CPV364M4F
Littelfuse Inc.
MG12300WB-BN2MM
Powerex Inc.
CM150DY-24H
Infineon Technologies
FP50R12KT4BOSA1
Microsemi Corporation
APTGF90DU60TG
Powerex Inc.