FP50R12KT4BOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 50A 280W
$0.00
Available to order
Reference Price (USD)
10+
$97.28700
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FP50R12KT4BOSA1 from Infineon Technologies is a high-performance IGBT module designed for power electronics applications. As part of the Discrete Semiconductor Products category, this transistor module offers exceptional efficiency and reliability. Key features include low saturation voltage, high-speed switching, and robust thermal performance. These IGBT modules are widely used in industrial motor drives, renewable energy systems, and electric vehicle powertrains. For example, the FP50R12KT4BOSA1 is ideal for solar inverters, welding equipment, and UPS systems where high power handling is required. Choose Infineon Technologies's advanced IGBT technology for your most demanding power conversion challenges.
Specifications
- Product Status: Discontinued at Digi-Key
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Power - Max: 280 W
- Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 50A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Microsemi Corporation
APTGF90DU60TG
Powerex Inc.
CM600DY-12NF
Microchip Technology
APTGF300A120G
GeneSiC Semiconductor
GB100XCP12-227
Microsemi Corporation
APTCV90TL12T3G
Microsemi Corporation
APTGF50TL60T3G
Infineon Technologies
FF600R12ME7B11BPSA1
onsemi
FMG2G100US60
Littelfuse Inc.
MG1250W-XBN2MM
Microchip Technology