VS-ETF150Y65U
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 650V 142A EMIPAK-2B
$0.00
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Reference Price (USD)
60+
$77.48883
Exquisite packaging
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Vishay General Semiconductor - Diodes Division's VS-ETF150Y65U stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the VS-ETF150Y65U enables higher power density in MRI gradient amplifiers. Choose Vishay General Semiconductor - Diodes Division for IGBT modules that push performance boundaries.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench
- Configuration: Three Level Inverter
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 142 A
- Power - Max: 417 W
- Vce(on) (Max) @ Vge, Ic: 2.06V @ 15V, 100A
- Current - Collector Cutoff (Max): 100 µA
- Input Capacitance (Cies) @ Vce: 6.6 nF @ 30 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: EMIPAK-2B
- Supplier Device Package: EMIPAK-2B
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