BSM300C12P3E201
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 1200V 300A MODULE
$750.60
Available to order
Reference Price (USD)
1+
$750.60000
500+
$743.094
1000+
$735.588
1500+
$728.082
2000+
$720.576
2500+
$713.07
Exquisite packaging
Discount
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Upgrade your designs with the BSM300C12P3E201 by Rohm Semiconductor, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the BSM300C12P3E201 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 5.6V @ 80mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1360W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: Module
- Package / Case: Module
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