BSM30GP60B2BOSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 600V 50A 180W
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BSM30GP60B2BOSA1 from Infineon Technologies exemplifies excellence in Transistors - IGBTs - Modules technology. This discrete semiconductor solution features a unique direct liquid cooling design for maximum power density. Technical highlights include: 200% overload capability, ultra-thin wafer technology, and short-circuit protection. The module excels in demanding applications such as electric aircraft propulsion, mining equipment, and high-speed rail systems. A typical deployment would be using the BSM30GP60B2BOSA1 in megawatt-level wind turbine converters. With Infineon Technologies's proven track record, the BSM30GP60B2BOSA1 represents the future of power semiconductor modules.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 50 A
- Power - Max: 180 W
- Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A
- Current - Collector Cutoff (Max): 500 µA
- Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Powerex Inc.
CM100E3U-12H
Infineon Technologies
MA13039695NDSA1
Infineon Technologies
FS100R12KT4GPNPSA1
Vishay General Semiconductor - Diodes Division
VS-GB50YF120N
Infineon Technologies
BSM25GP120B2BOSA1
Infineon Technologies
FF600R12IS4F
Vishay General Semiconductor - Diodes Division
VS-92-0173
Vishay General Semiconductor - Diodes Division
VS-GT400TH60N
IXYS
MIAA20WD600TMH
Infineon Technologies