VS-GB50YF120N
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 66A ECONO2 4PACK
$0.00
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Reference Price (USD)
12+
$152.27417
Exquisite packaging
Discount
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Vishay General Semiconductor - Diodes Division's VS-GB50YF120N represents the cutting edge in Transistors - IGBTs - Modules technology. This discrete semiconductor product delivers superior power control with its optimized gate-drive characteristics and short-circuit ruggedness. The module's innovative design features include an advanced NPT trench construction and low inductance package. Primary applications include traction systems, induction heating, and high-frequency power supplies. A typical use case would be implementing the VS-GB50YF120N in industrial servo drives or medium-voltage frequency converters. Trust Vishay General Semiconductor - Diodes Division's expertise in IGBT modules for energy-efficient power management solutions.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 66 A
- Power - Max: 330 W
- Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 75A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: ECONO2 4PACK
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