BSM50GB60DLCHOSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 600V 75A 280W
$0.00
Available to order
Reference Price (USD)
10+
$55.37200
Exquisite packaging
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Infineon Technologies's BSM50GB60DLCHOSA1 stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the BSM50GB60DLCHOSA1 enables higher power density in MRI gradient amplifiers. Choose Infineon Technologies for IGBT modules that push performance boundaries.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 75 A
- Power - Max: 280 W
- Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
- Current - Collector Cutoff (Max): 500 µA
- Input Capacitance (Cies) @ Vce: 2.2 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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