FB20R06W1E3B11HOMA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 600V 29A 94W
$0.00
Available to order
Reference Price (USD)
24+
$31.91833
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the power of Infineon Technologies's FB20R06W1E3B11HOMA1, a premium IGBT module in the Transistors - IGBTs - Modules classification. This discrete semiconductor solution offers ultra-low conduction losses and avalanche ruggedness for harsh environments. The module's unique selling points include: VCE(sat) negative temperature coefficient, aluminum nitride substrate, and press-pack technology. Major application sectors include rail transportation, marine propulsion, and aerospace power systems. The FB20R06W1E3B11HOMA1 performs exceptionally well in high-voltage DC transmission and pulsed power applications. With Infineon Technologies's FB20R06W1E3B11HOMA1, you get unmatched reliability in power electronics designs.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 29 A
- Power - Max: 94 W
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Powerex Inc.
CM100TU-24F
Vishay General Semiconductor - Diodes Division
VS-GB150LH120N
IXYS
MIO1800-17E10
IXYS
VIO75-12P1
Infineon Technologies
BSM30GP60BOSA1
Powerex Inc.
MG800J2YS50A
Infineon Technologies
IRG7T100HF12A
Toshiba Semiconductor and Storage
S1PA7[UD]
Infineon Technologies
FZ1000R12KF5NOSA1
Microsemi Corporation