BUK754R0-55B,127
NXP USA Inc.
NXP USA Inc.
PFET, 75A I(D), 55V, 0.004OHM, 1
$0.71
Available to order
Reference Price (USD)
1+
$0.71000
500+
$0.7029
1000+
$0.6958
1500+
$0.6887
2000+
$0.6816
2500+
$0.6745
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the BUK754R0-55B,127 single MOSFET from NXP USA Inc.. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the BUK754R0-55B,127 combines cutting-edge technology with NXP USA Inc.'s renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6776 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJL2302A-F2-0000HF
Microchip Technology
VP0109N3-G
Vishay Siliconix
SI7374DP-T1-GE3
Fairchild Semiconductor
FDB8030L
Texas Instruments
CSD23202W10T
STMicroelectronics
STP18NM60ND
Nexperia USA Inc.
PSMN3R9-60PSQ
Renesas Electronics America Inc
N0413N-ZK-E1-AY
Infineon Technologies
IPU80R600P7AKMA1
onsemi