BUK9628-55A,118
Nexperia USA Inc.
Nexperia USA Inc.
N-CHANNEL TRENCHMOS LOGIC LEVEL
$0.30
Available to order
Reference Price (USD)
800+
$0.47860
1,600+
$0.43246
2,400+
$0.40363
5,600+
$0.38345
20,000+
$0.36904
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BUK9628-55A,118 from Nexperia USA Inc. sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Nexperia USA Inc.'s BUK9628-55A,118 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 5V
- Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 99W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
onsemi
NTD4813N-35G
Nexperia USA Inc.
BUK7Y153-100EX
Harris Corporation
IRFD113
Infineon Technologies
IPD220N06L3GATMA1
Vishay Siliconix
IRFZ34SPBF
Infineon Technologies
IRF520NSTRLPBF
Toshiba Semiconductor and Storage
TPW4R50ANH,L1Q
IXYS
IXTT1N300P3HV
Sanken
GKI03026
Infineon Technologies