BUK9637-100E,118
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 100V 31A D2PAK
$0.72
Available to order
Reference Price (USD)
4,800+
$0.47884
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BUK9637-100E,118 from Nexperia USA Inc. sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Nexperia USA Inc.'s BUK9637-100E,118 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 22.8 nC @ 5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 2681 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 96W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Vishay Siliconix
SI4408DY-T1-E3
Infineon Technologies
IPA50R280CEXKSA2
Vishay Siliconix
SI4463CDY-T1-GE3
Toshiba Semiconductor and Storage
SSM3K337R,LF
Texas Instruments
CSD19536KTTT
Texas Instruments
CSD17576Q5B
Infineon Technologies
BSP603S2LNT
Microchip Technology
APT37M100L
Vishay Siliconix
SIA469DJ-T1-GE3
Fairchild Semiconductor