BUK963R3-60E,118
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
$3.15
Available to order
Reference Price (USD)
800+
$1.24754
1,600+
$1.14489
2,400+
$1.06593
5,600+
$1.02645
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BUK963R3-60E,118 from Nexperia USA Inc. redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the BUK963R3-60E,118 offers the precision and reliability you need. Trust Nexperia USA Inc. to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 13490 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 293W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Diodes Incorporated
BSS123K-13
Renesas Electronics America Inc
HAT2199R-EL-E
Fairchild Semiconductor
FQB7P06TM
Microchip Technology
APT50M75B2FLLG
Infineon Technologies
IPI80N06S2L05AKSA2
Taiwan Semiconductor Corporation
TSM340N06CP ROG
Vishay Siliconix
SIHG47N60AEF-GE3
Infineon Technologies
IPI100N04S4H2AKSA1
Rohm Semiconductor
R8003KNXC7G
onsemi