BUK9C1R3-40EJ
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 40V 190A D2PAK-7
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the BUK9C1R3-40EJ by NXP USA Inc., a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the BUK9C1R3-40EJ is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 1.3mOhm @ 90A, 5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK-7
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Related Products
Infineon Technologies
IRL2910STRL
Infineon Technologies
IRFS3006-7PPBF
onsemi
FCA20N60FS
Infineon Technologies
IRFIZ24E
IXYS
IXKC40N60C
Vishay Siliconix
SI5402BDC-T1-GE3
Infineon Technologies
SPB21N10T
Toshiba Semiconductor and Storage
2SK4021(Q)
Infineon Technologies
IPD50R950CEATMA1
IXYS