Shopping cart

Subtotal: $0.00

C3M0016120D

Wolfspeed, Inc.
C3M0016120D Preview
Wolfspeed, Inc.
SICFET N-CH 1200V 115A TO247-3
$82.06
Available to order
Reference Price (USD)
1+
$82.06000
500+
$81.2394
1000+
$80.4188
1500+
$79.5982
2000+
$78.7776
2500+
$77.957
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 15V
  • Vgs(th) (Max) @ Id: 3.6V @ 23mA
  • Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 15 V
  • Vgs (Max): +15V, -4V
  • Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 1000 V
  • FET Feature: -
  • Power Dissipation (Max): 556W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3

Related Products

Fairchild Semiconductor

FDP6676

Nexperia USA Inc.

PSMN3R9-100YSFX

Rohm Semiconductor

RS1E300GNTB

Vishay Siliconix

SI2301BDS-T1-E3

NXP USA Inc.

PMPB33XN,115

Vishay Siliconix

SQJ431AEP-T1_GE3

STMicroelectronics

STH272N6F7-6AG

Renesas Electronics America Inc

RJK6026DPP-90#T2F

STMicroelectronics

STP5N95K5

Top