PMPB33XN,115
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 30V 4.3A DFN2020MD-6
$0.08
Available to order
Reference Price (USD)
3,000+
$0.16520
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the PMPB33XN,115 by NXP USA Inc., a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the PMPB33XN,115 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 47mOhm @ 4.3A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta), 8.3W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN1010B-6
- Package / Case: 6-XFDFN Exposed Pad
Related Products
Vishay Siliconix
SQJ431AEP-T1_GE3
STMicroelectronics
STH272N6F7-6AG
Renesas Electronics America Inc
RJK6026DPP-90#T2F
IXYS
IXFT69N30P
STMicroelectronics
STP5N95K5
GeneSiC Semiconductor
G2R50MT33K
Toshiba Semiconductor and Storage
TK5R1A08QM,S4X
onsemi
FDPF44N25T
Texas Instruments
CSD25404Q3T
Infineon Technologies