CPV363M4U
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MODULE 600V 13A 36W IMS-2
$0.00
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Reference Price (USD)
160+
$29.78013
Exquisite packaging
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Discover the power of Vishay General Semiconductor - Diodes Division's CPV363M4U, a premium IGBT module in the Transistors - IGBTs - Modules classification. This discrete semiconductor solution offers ultra-low conduction losses and avalanche ruggedness for harsh environments. The module's unique selling points include: VCE(sat) negative temperature coefficient, aluminum nitride substrate, and press-pack technology. Major application sectors include rail transportation, marine propulsion, and aerospace power systems. The CPV363M4U performs exceptionally well in high-voltage DC transmission and pulsed power applications. With Vishay General Semiconductor - Diodes Division's CPV363M4U, you get unmatched reliability in power electronics designs.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 13 A
- Power - Max: 36 W
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 13A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 1.1 nF @ 30 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 19-SIP (13 Leads), IMS-2
- Supplier Device Package: IMS-2
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