FP25R12KT4B11BOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 25A 160W
$0.00
Available to order
Reference Price (USD)
10+
$62.54900
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FP25R12KT4B11BOSA1 by Infineon Technologies redefines performance in the IGBT modules segment of Discrete Semiconductor Products. Featuring sixth-generation field-stop technology, this power transistor delivers optimal switching characteristics and short-circuit withstand capability. Key attributes include: 175 C maximum junction temperature, low EMI generation, and integrated current sensing. Industrial applications span from elevator drives and CNC machinery to large-scale HVAC systems. A practical implementation would be using the FP25R12KT4B11BOSA1 in high-efficiency servo controllers for manufacturing automation. Infineon Technologies combines innovation with quality in every FP25R12KT4B11BOSA1 module.
Specifications
- Product Status: Discontinued at Digi-Key
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 25 A
- Power - Max: 160 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Powerex Inc.
CM400HA-24A
Vishay General Semiconductor - Diodes Division
VS-GB90DA60U
Infineon Technologies
FF600R12ME4CB11BOSA1
Powerex Inc.
CM600DU-24NF
Powerex Inc.
CM200EXS-34SA
Powerex Inc.
CM300DY-24NF
Powerex Inc.
CM200DU-24F
IXYS
IXGN60N60C2D1
Infineon Technologies
IFF600B12ME4B11BOSA1
Microsemi Corporation