DD800S17K3B2NOSA1
Infineon Technologies
Infineon Technologies
DD800S17 - IGBT MODULE
$777.84
Available to order
Reference Price (USD)
1+
$777.84000
500+
$770.0616
1000+
$762.2832
1500+
$754.5048
2000+
$746.7264
2500+
$738.948
Exquisite packaging
Discount
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Engineered for excellence, the DD800S17K3B2NOSA1 IGBT module by Infineon Technologies sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The DD800S17K3B2NOSA1 finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Infineon Technologies continues to lead the IGBT module revolution with innovations like the DD800S17K3B2NOSA1.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: -
- NTC Thermistor: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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