NXH50M65L4C2ESG
onsemi
onsemi
650V 50A CONVERTER-INVERTER-PFCS
$82.83
Available to order
Reference Price (USD)
1+
$82.83000
500+
$82.0017
1000+
$81.1734
1500+
$80.3451
2000+
$79.5168
2500+
$78.6885
Exquisite packaging
Discount
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Optimize your power systems with onsemi's NXH50M65L4C2ESG, a high-efficiency IGBT module in the Discrete Semiconductor Products range. This transistor module incorporates seventh-generation micro-pattern trench technology for minimal conduction losses. Special features include: integrated gate driver compatibility, SCADA-ready monitoring interfaces, and corrosion-resistant terminals. Application areas cover industrial cranes, subway power networks, and large-scale battery storage systems. The NXH50M65L4C2ESG is particularly effective in high-ambient-temperature environments like steel mill drives. onsemi brings decades of semiconductor expertise to every NXH50M65L4C2ESG module.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 50 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 75A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 2.608 nF @ 20 V
- Input: Single Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 27-PowerDIP Module (1.858", 47.20mm)
- Supplier Device Package: 27-DIP
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